SPW47N60CFD
CoolMOS
TM
Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D
T
C
=25 °C A
T
C
=100 °C
Pulsed drain current
1)
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse E
AS
I
D
=10 A, V
DD
=50 V 1800 mJ
Avalanche energy, repetitive t
AR
2),3)
E
AR
I
D
=20 A, V
DD
=50 V
Avalanche current, repetitive t
AR
2),3)
I
AR
A
Drain source voltage slope dv /dt
I
D
=46 A, V
DS
=480 V,
T
j
=125 °C
V/ns
Reverse diode dv /dt dv /dt V/ns
Maximum diode commutation speed di /dt A/µs
Gate source voltage V
GS
static V
AC (f >1 Hz)
Power dissipation P
tot
T
C
=25 °C W
Operating and storage temperature T
j
, T
stg
°C
600
20
80
I
S
=46 A, V
DS
=480 V,
T
j
=125 °C
±20
±30
417
-55 ... 150
1
40
Value
46
29
115
V
DS
600 V
R
DS(on),max
0.083 Ω
I
D
46 A
Product Summary
PG-TO247
Type Package Ordering Code Marking
SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD
Rev. 1.2 page 1 2005-06-28